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SILIcON GermaNiUm FOrmiNg

US Patent for Method of forming conformal epitaxial ...
2017-12-12 · The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material. The cladding material is capable of being deposited to a thickness which is less than cladding materials formed by conventional deposition/etch techniques.
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Methods for forming germanium and silicon germanium ...
2016-4-26 · A method for forming nanowire semiconductor devices includes a) providing a substrate including an oxide layer defining vias; and b) depositing nanowires in the vias. The nanowires are made of a material selected from a group consisting of germanium or silicon germanium. The method further includes c) selectively etching back the oxide layer ...
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Polycrystalline silicon germanium films for forming micro ...
1. A process for forming a micro-electromechanical system, comprising: depositing onto a substrate a sacrificial layer of silicon- germanium; depositing onto the sacrificial layer a structural layer of silicon-germanium, where the germanium content of the sacrificial layer is greater than the germanium content of the structural layer; and
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Intrinsic Semiconductors - butane.chem.uiuc.edu
2012-4-5 · This is the structure of silicon and germanium as well. The black lines just indicate the boundaries of the unit cell while the blue lines indicate bonds between atoms. You can see the bonds on the right as well. The unit cell is a cube with height = length = width given by the cell parameter a. For carbon, an element with a small atomic radius ...
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Method for forming multi-layer gate structure - Patent US ...
2002-5-17 · The silicon germanium layer is formed by deposition or ion implantation process. Because the boron migrates more slowly in the silicon germanium layer, during the thermal process, the boron does not migrate to the nitride tungsten layer and thus the contact resistance of the gate structure is maintained at a desired level.
Details
US Patent for Structure and method for forming field ...
2010-9-27 · The materials and methods for forming silicon-germanium layer 410 may be similar to SiGe layer 110 described above in connection with FIG. 1A. In other embodiments, SiGe layer 410 may be formed by an implant process. The implant process may be similar to implant process 230 for forming SiGe layer 230a described above in connection with FIG. 3E.
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METHOD OF FORMING FINE PATTERN OF
A method of forming a self-aligned contact of a semiconductor device comprising: forming a conductive line structure which comprises a conductive material layer, a hard mask layer, and a sidewall spacer on a substrate; forming a silicon germanium (Si 1-x Ge x) sacrificial layer, which has a height equal to or higher than a height of at least ...
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Model investigations of network-forming materials ...
In addition, the isomorphology between amorphous silicon and the silicon sub-lattice in SiO 2 is described. Polyamorphism in Si and ZnCl 2 is analysed and discussed. Finally, the study of reduced (two) dimensional systems is discussed for carbon, silicon and germanium.
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电子科学与技术专业英语(微电子技术分册)第一章译文 - 豆丁网
2014-2-15 · Since early1960s silicon has become practicalsubstitute（实际取 hasnow virtually supplanted（事实上替代） germanium semiconductorfabrication(结构）然而锗不太适合在很多方面应用因为温度适当提高后锗器件会产生高的漏电流。另外，锗的氧化物是水溶性
 Details
Method for forming multi-layer gate structure - Patent US ...
2002-5-17 · The silicon germanium layer is formed by deposition or ion implantation process. Because the boron migrates more slowly in the silicon germanium layer, during the thermal process, the boron does not migrate to the nitride tungsten layer and thus the contact resistance of the gate structure is maintained at a desired level.
Details
Rapid Solid-State Metathesis Routes to Nanostructured ...
2014-8-19 · Methods for producing nanostructured silicon and silicon-germanium via solid state metathesis (SSM). The method of forming nanostructured silicon comprises the steps of combining a stoichiometric mixture of silicon tetraiodide (SiI4) and an alkaline earth metal silicide into a homogeneous powder, and initating the reaction between the silicon tetraiodide (SiI4)
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Method for forming a semiconductor structure having a ...
The silicon layer is formed by first forming a silicon germanium (sige) layer of at least 30 percent germanium that has relaxed strain on a donor wafer. A thin silicon layer is epitaxially grown to have tensile strain on the relaxed sige layer .
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US Patent for Structure and method for forming field ...
2010-9-27 · The materials and methods for forming silicon-germanium layer 410 may be similar to SiGe layer 110 described above in connection with FIG. 1A. In other embodiments, SiGe layer 410 may be formed by an implant process. The implant process may be similar to implant process 230 for forming SiGe layer 230a described above in connection with FIG. 3E.
Details
US Patent for Method of forming conformal epitaxial ...
2017-12-12 · The present disclosure generally relates to devices having conformal semiconductor cladding materials, and methods of forming the same. The cladding material is a silicon germanium epitaxial material. The cladding material is capable of being deposited to a thickness which is less than cladding materials formed by conventional deposition/etch techniques.
Details
Rapid alloying of silicon with germanium in microwave ...
2015-11-23 · germanium gets dissolved into silicon lattice forming an alloy as is evidenced by slight broadening and a shift in silicon peaks as can be seen in Table 1. There is no other phase present in the ﬁnal product. The situation does not change on heating the mixture for 5 min in microwave H ﬁeld (Fig. 2a). Figure 2c exhibits the X-
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4. Doping of Group-IV-Based Materials
2011-2-22 · Silicon and germanium, which both crystallize in the diamond lattice structure, are completely miscible forming Si Ge solids with ranging from 0 to 1. The most precise and comprehensive investigation of bulk lattice parameters
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Technique for forming a MEMS device - Silicon
U.S. Appl. No. 13/075,806, filed Mar. 30, 2011, entitled “Technique for Forming a MEMS Device Using Island STructures,” naming inventors Emmanuel P. Quevy and Carrie W. Low. Low, Carrie Wing-Zin, “Novel Processes for Modular Integration of Silicon-Germanium MEMS with CMOS Electronics,” Technical Report No. UCB/EECS-2007-31, Electrical ...
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Ultrathin Ge epilayers on Si produced by low-temperature ...
By fitting the ellipsometry spectra using Deltapsi2 software, we found that a thin layer of germanium oxide (about 1.7 nm) has formed on the germanium film (thickness 107 nm), which has grown directly on the silicon wafer without forming
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2. Semiconductor Doping Technology
2011-2-22 · The applicability to silicon and germanium is complicated due to the anisotropic effective mass of the conduction electrons. To obtain a first order approximation of the impurity levels we use for electrons in silicon and in
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Growing method of silicon germanium substrate and
2011-7-29 · The invention provides a growing method of a silicon germanium substrate, and the method comprises the following steps: providing a monocrystalline silicon support substrate; forming a seed crystal layer on the bottom surface of the monocrystalline silicon support substrate, wherein the material of the seed crystal layer is monocrystalline silicon germanium;
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Method for forming multi-layer gate structure - Patent US ...
2002-5-17 · The silicon germanium layer is formed by deposition or ion implantation process. Because the boron migrates more slowly in the silicon germanium layer, during the thermal process, the boron does not migrate to the nitride tungsten layer and thus the contact resistance of the gate structure is maintained at a desired level.
Details
Silicene and germanene: Silicon and germanium in the ...
2015-1-5 · 1. Introduction1.1. Fundamentals. Silicene and germanene, graphene’s “cousins” are considered to be single layers of sp 2-hybridized silicon and germanium forming a 2D honeycomb lattice.Silicene and germanene do not exist in Nature in free standing form and, unlike graphene or other 2D materials they cannot be exfoliated from the bulk.
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Solution phase synthesis of silicon and germanium ...
Solution phase synthesis of silicon and germanium nanowires ... This feature article examines the various synthetic strategies which have been successful in forming Ge and Si NWs within solvent based systems with particular emphasis on the reaction media and catalytic method employed.
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Formation of Compositionally Abrupt Axial
2009-11-27 · Abstract. We have formed compositionally abrupt interfaces in silicon-germanium (Si-Ge) and Si-SiGe heterostructure nanowires by using solid aluminum-gold alloy catalyst particles rather than the conventional liquid semiconductor–metal eutectic droplets. We demonstrated single interfaces that are defect-free and close to atomically abrupt, as ...
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US Patent for Integration of strained silicon germanium ...
2018-6-27 · A method of forming a finFET transistor device includes forming a crystalline, compressive strained silicon germanium (cSiGe) layer over a substrate; masking a first region of the cSiGe layer so as to expose a second region of the cSiGe layer; subjecting the exposed second region of the cSiGe layer to an implant process so as to amorphize a bottom portion
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Silicon & Germanium Crystal Structure |
2018-1-28 · Diamond Cubic Crystal Structure. Silicon and Germanium are examples of covalent crystals. In these solids the atoms are linked to each other by covalent bonds rather than by electrostatic forces or by delocalized valence
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4. Doping of Group-IV-Based Materials
2011-2-22 · Silicon and germanium, which both crystallize in the diamond lattice structure, are completely miscible forming Si Ge solids with ranging from 0 to 1. The most precise and comprehensive investigation of bulk lattice parameters
Details
Ultrathin Ge epilayers on Si produced by low-temperature ...
By fitting the ellipsometry spectra using Deltapsi2 software, we found that a thin layer of germanium oxide (about 1.7 nm) has formed on the germanium film (thickness 107 nm), which has grown directly on the silicon wafer without forming
Details
Model investigations of network-forming materials ...
In addition, the isomorphology between amorphous silicon and the silicon sub-lattice in SiO 2 is described. Polyamorphism in Si and ZnCl 2 is analysed and discussed. Finally, the study of reduced (two) dimensional systems is discussed for carbon, silicon and germanium.
Details

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Our Products

Crawler type Mobile Crushing Plant

Secondary Cone Crusher + Screen

HJ Series High Efficiency Jaw Crusher

HPT Cone Crusher

European Type Coarse Powder Mill

T130X Superfine Grinding Mill

SILIcON GermaNiUm FOrmiNg

US Patent for Method of forming conformal epitaxial ...

Methods for forming germanium and silicon germanium ...

Polycrystalline silicon germanium films for forming micro ...

Intrinsic Semiconductors - butane.chem.uiuc.edu

Method for forming multi-layer gate structure - Patent US ...

US Patent for Structure and method for forming field ...

METHOD OF FORMING FINE PATTERN OF

Model investigations of network-forming materials ...

电子科学与技术专业英语(微电子技术分册)第一章译文 - 豆丁网

Method for forming multi-layer gate structure - Patent US ...

Rapid Solid-State Metathesis Routes to Nanostructured ...

Method for forming a semiconductor structure having a ...

US Patent for Structure and method for forming field ...

US Patent for Method of forming conformal epitaxial ...

Rapid alloying of silicon with germanium in microwave ...

4. Doping of Group-IV-Based Materials

Technique for forming a MEMS device - Silicon

Ultrathin Ge epilayers on Si produced by low-temperature ...

2. Semiconductor Doping Technology

Growing method of silicon germanium substrate and

Method for forming multi-layer gate structure - Patent US ...

Silicene and germanene: Silicon and germanium in the ...

Solution phase synthesis of silicon and germanium ...

Formation of Compositionally Abrupt Axial

US Patent for Integration of strained silicon germanium ...

Silicon & Germanium Crystal Structure |

4. Doping of Group-IV-Based Materials

Ultrathin Ge epilayers on Si produced by low-temperature ...

Model investigations of network-forming materials ...

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